1 2 3 sot-89 -3l plastic-encapsulate transistors 2SD2391 transistor (npn) features low v ce(sat) marking: dt maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 6 v collector cut-off current i cbo v cb =50v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =2v,i c =0.5a 120 270 dc current gain h fe(2) v ce =2v,i c =1.5a 45 collector-emitter saturation voltage v ce(sat) i c =1a,i b =50ma 0.35 v transition frequency f t v ce =2v,i c =0.5a, f=100mhz 210 mhz output capacitance c ob v cb =10v,i e =0, f=1mhz 21 pf symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 6 v i c collector current -continuous 2 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 sot-89 -3l 1.base 2.collector 3.emitter a,jun,2011 dongguan nanjing electronics ltd., a,jun,2011
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